APMC2017 – Asia Pacific Microwave Conference

Colombo R. Bolognesi
Chair, Millimeter-Wave Electronics Group
Eidgenössische Technische Hochschule Zürich
(Swiss Federal Institute of Technology / ETH-Zürich)        
ETZ K. 85 , Gloriastrasse 35, 8092 Zürich


EuMA: Special Session
Room, Time & Date: ROOM 02 | 13:40 – 14:00 | Tuesday, 14 November 2017


Millimeter-Wave Transistor Research at ETH-Zurich

The present paper will review mm-wave device research performed by the Author’s Group at the ETH-Zurich, encompassing the development of so-called THz InP/GaAsSb DHBTs, mm-wave GaN HEMTs with a special emphasis on devices grown on low-cost Silicon substrates culminating with the demonstration of W-band MMIC amplifiers realized in a 50 nm process. Time permitting, recent work on InP/GaInAs pHEMTs for cryogenic ultralow-noise applications will be discussed.


Author Biography

Colombo R. Bolognesi was born in Montreal, Canada. He earned the B.Eng. from McGill University (Montréal), the M.Eng. from Carleton University, and the Ph.D. from the University of California, Santa Barbara (UCSB) in 1993.

Prof. Bolognesi holds the Chair of Millimeter-Wave Electronics at the Swiss Federal Institute of Technology in Zürich (ETH-Zürich). His research activities target the development of high-speed devices (HBTs, HEMTs) based on the InP- and GaN- related materials to continually extend their application towards higher frequencies. At ETH his Group established several speed records for GaN HEMTs on SiC or Silicon substrates, and continued to innovate with InP/GaAsSb DHBTs now reaching cutoff frequencies as high as 1.2 THz as determined by conventional means. His Group also supplies ultralow-noise InP HEMTs to the European Space Agency (ESA) used in the Agency’s Deep Space Network ground station cryogenic receivers.

Prof. Bolognesi was elected Fellow of the IEEE in 2008 for contributions to the development of Antimonide-Based Heterojunction Bipolar Transistors.